N-Channel MOSFET, 128 A, 100 V, 3-Pin TO-220 onsemi FDP4D5N10C

Nº de Estoque RS: 181-1903Marca: onsemiPart Number: FDP4D5N10C
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Documentos Técnicos

Especificações

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

128 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Typical Gate Charge @ Vgs

48 nC @ 10 V

Length

10.36mm

Width

4.67mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Height

15.21mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

País de Origem

China

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R$ 56,12

Each (In a Pack of 2) (Sem VAT)

N-Channel MOSFET, 128 A, 100 V, 3-Pin TO-220 onsemi FDP4D5N10C
Selecione o tipo de embalagem

R$ 56,12

Each (In a Pack of 2) (Sem VAT)

N-Channel MOSFET, 128 A, 100 V, 3-Pin TO-220 onsemi FDP4D5N10C
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

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Documentos Técnicos

Especificações

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

128 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Typical Gate Charge @ Vgs

48 nC @ 10 V

Length

10.36mm

Width

4.67mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Height

15.21mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

País de Origem

China