onsemi FGH75T65SQDNL4, P-Channel IGBT, 200 A 650 V, 4-Pin TO-247, Through Hole

Nº de Estoque RS: 181-1929Marca: onsemiPart Number: FGH75T65SQDNL4
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Documentos Técnicos

Especificações

Brand

onsemi

Maximum Continuous Collector Current

200 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

375 W

Number of Transistors

1

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

P

Pin Count

4

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.8 x 5.2 x 22.74mm

Minimum Operating Temperature

-55 °C

Gate Capacitance

5100pF

Maximum Operating Temperature

+175 °C

Energy Rating

160mJ

País de Origem

China

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R$ 144,76

Each (Sem VAT)

onsemi FGH75T65SQDNL4, P-Channel IGBT, 200 A 650 V, 4-Pin TO-247, Through Hole
Selecione o tipo de embalagem

R$ 144,76

Each (Sem VAT)

onsemi FGH75T65SQDNL4, P-Channel IGBT, 200 A 650 V, 4-Pin TO-247, Through Hole
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

Comprar em grandes quantidades

QuantidadePreço unitário
1 - 9R$ 144,76
10 - 99R$ 130,88
100 - 249R$ 93,01
250 - 499R$ 91,55
500+R$ 90,01

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Documentos Técnicos

Especificações

Brand

onsemi

Maximum Continuous Collector Current

200 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

375 W

Number of Transistors

1

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

P

Pin Count

4

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.8 x 5.2 x 22.74mm

Minimum Operating Temperature

-55 °C

Gate Capacitance

5100pF

Maximum Operating Temperature

+175 °C

Energy Rating

160mJ

País de Origem

China