N-Channel MOSFET, 68 A, 80 V, 8-Pin WDFN onsemi NTTFS6H850NTAG
Documentos Técnicos
Especificações
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
68 A
Maximum Drain Source Voltage
80 V
Package Type
WDFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Length
3.15mm
Typical Gate Charge @ Vgs
3.6 nC @ 10 V
Width
3.15mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Height
0.75mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
País de Origem
Malaysia
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R$ 17,70
Each (On a Reel of 1500) (Sem VAT)
1500
R$ 17,70
Each (On a Reel of 1500) (Sem VAT)
1500
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificações
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
68 A
Maximum Drain Source Voltage
80 V
Package Type
WDFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Length
3.15mm
Typical Gate Charge @ Vgs
3.6 nC @ 10 V
Width
3.15mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Height
0.75mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
País de Origem
Malaysia
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products