Documentos Técnicos
Especificações
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
2 A
Maximum Collector Emitter Voltage
100 V
Package Type
TP-FA
Mounting Type
Through Hole
Maximum Power Dissipation
15 W
Minimum DC Current Gain
140, 200
Transistor Configuration
Single
Maximum Collector Base Voltage
120 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
390 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
6.5 x 2.3 x 5.5mm
Maximum Operating Temperature
+150 °C
País de Origem
China
Detalhes do produto
General Purpose NPN Transistors, Over 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
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P.O.A.
700
P.O.A.
700
Documentos Técnicos
Especificações
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
2 A
Maximum Collector Emitter Voltage
100 V
Package Type
TP-FA
Mounting Type
Through Hole
Maximum Power Dissipation
15 W
Minimum DC Current Gain
140, 200
Transistor Configuration
Single
Maximum Collector Base Voltage
120 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
390 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
6.5 x 2.3 x 5.5mm
Maximum Operating Temperature
+150 °C
País de Origem
China
Detalhes do produto
General Purpose NPN Transistors, Over 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.