Documentos Técnicos
Especificações
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
16 to 32mA
Maximum Drain Source Voltage
15 V
Maximum Drain Gate Voltage
-15V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
CP
Pin Count
3
Drain Gate On-Capacitance
10pF
Source Gate On-Capacitance
2.9pF
Dimensions
2.9 x 1.5 x 1.1mm
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
1.1mm
Width
1.5mm
País de Origem
China
Detalhes do produto
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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P.O.A.
Embalagem de Produção (Bobina)
20
P.O.A.
Embalagem de Produção (Bobina)
20
Documentos Técnicos
Especificações
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
16 to 32mA
Maximum Drain Source Voltage
15 V
Maximum Drain Gate Voltage
-15V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
CP
Pin Count
3
Drain Gate On-Capacitance
10pF
Source Gate On-Capacitance
2.9pF
Dimensions
2.9 x 1.5 x 1.1mm
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
1.1mm
Width
1.5mm
País de Origem
China
Detalhes do produto
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.