Documentos Técnicos
Especificações
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
30 V
Package Type
ATPAK
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
31 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
7.3mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.5mm
Typical Gate Charge @ Vgs
34 nC @ 10 V
Height
1.5mm
País de Origem
China
Detalhes do produto
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
P.O.A.
3000
P.O.A.
3000
Documentos Técnicos
Especificações
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
30 V
Package Type
ATPAK
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
31 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
7.3mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.5mm
Typical Gate Charge @ Vgs
34 nC @ 10 V
Height
1.5mm
País de Origem
China
Detalhes do produto