Documentos Técnicos
Especificações
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
8 to 80mA
Maximum Drain Source Voltage
0.4 V
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Configuration
Single
Transistor Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.9 x 1.3 x 0.97mm
Length
2.9mm
Maximum Operating Temperature
+150 °C
Width
1.3mm
Height
0.97mm
Detalhes do produto
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
R$ 251,00
R$ 2,51 Each (In a Pack of 100) (Sem VAT)
Padrão
100
R$ 251,00
R$ 2,51 Each (In a Pack of 100) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
Padrão
100
Informações de estoque temporariamente indisponíveis.
| Quantidade | Preço unitário | Per Pacote |
|---|---|---|
| 100 - 400 | R$ 2,51 | R$ 251,00 |
| 500 - 900 | R$ 2,18 | R$ 218,00 |
| 1000+ | R$ 1,91 | R$ 191,00 |
Documentos Técnicos
Especificações
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
8 to 80mA
Maximum Drain Source Voltage
0.4 V
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Configuration
Single
Transistor Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.9 x 1.3 x 0.97mm
Length
2.9mm
Maximum Operating Temperature
+150 °C
Width
1.3mm
Height
0.97mm
Detalhes do produto
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.


