Documentos Técnicos
Especificações
Brand
onsemiChannel Type
N, P
Maximum Continuous Drain Current
5.5 A, 7 A
Maximum Drain Source Voltage
30 V
Package Type
ECH
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
24 mΩ, 39 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
2.3mm
Transistor Material
Si
Number of Elements per Chip
2
Length
2.9mm
Typical Gate Charge @ Vgs
11.8 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
0.9mm
Detalhes do produto
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channels into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semis trench technology.
MOSFET Transistors, ON Semiconductor
R$ 367,00
R$ 14,68 Each (In a Pack of 25) (Sem VAT)
Padrão
25
R$ 367,00
R$ 14,68 Each (In a Pack of 25) (Sem VAT)
Padrão
25
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
Quantidade | Preço unitário | Per Pacote |
---|---|---|
25 - 75 | R$ 14,68 | R$ 367,00 |
100 - 225 | R$ 12,83 | R$ 320,75 |
250+ | R$ 11,30 | R$ 282,50 |
Documentos Técnicos
Especificações
Brand
onsemiChannel Type
N, P
Maximum Continuous Drain Current
5.5 A, 7 A
Maximum Drain Source Voltage
30 V
Package Type
ECH
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
24 mΩ, 39 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
2.3mm
Transistor Material
Si
Number of Elements per Chip
2
Length
2.9mm
Typical Gate Charge @ Vgs
11.8 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
0.9mm
Detalhes do produto
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channels into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semis trench technology.