onsemi Dual N/P-Channel MOSFET, 5.5 A, 7 A, 30 V, 8-Pin ECH ECH8661-TL-H

Nº de Estoque RS: 802-0850Marca: onsemiPart Number: ECH8661-TL-H
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Documentos Técnicos

Especificações

Brand

onsemi

Channel Type

N, P

Maximum Continuous Drain Current

5.5 A, 7 A

Maximum Drain Source Voltage

30 V

Package Type

ECH

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

24 mΩ, 39 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.6V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

2.3mm

Transistor Material

Si

Number of Elements per Chip

2

Length

2.9mm

Typical Gate Charge @ Vgs

11.8 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

0.9mm

Detalhes do produto

Dual N/P-Channel MOSFET, ON Semiconductor

The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.

MOSFET Transistors, ON Semiconductor

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Informações de estoque temporariamente indisponíveis.

R$ 367,00

R$ 14,68 Each (In a Pack of 25) (Sem VAT)

onsemi Dual N/P-Channel MOSFET, 5.5 A, 7 A, 30 V, 8-Pin ECH ECH8661-TL-H
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R$ 367,00

R$ 14,68 Each (In a Pack of 25) (Sem VAT)

onsemi Dual N/P-Channel MOSFET, 5.5 A, 7 A, 30 V, 8-Pin ECH ECH8661-TL-H
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

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QuantidadePreço unitárioPer Pacote
25 - 75R$ 14,68R$ 367,00
100 - 225R$ 12,83R$ 320,75
250+R$ 11,30R$ 282,50

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

onsemi

Channel Type

N, P

Maximum Continuous Drain Current

5.5 A, 7 A

Maximum Drain Source Voltage

30 V

Package Type

ECH

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

24 mΩ, 39 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.6V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

2.3mm

Transistor Material

Si

Number of Elements per Chip

2

Length

2.9mm

Typical Gate Charge @ Vgs

11.8 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

0.9mm

Detalhes do produto

Dual N/P-Channel MOSFET, ON Semiconductor

The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more