N-Channel MOSFET, 17 A, 650 V, 3-Pin TO-220 onsemi FCP190N65S3
Documentos Técnicos
Especificações
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
144 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
4.7mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.67mm
Typical Gate Charge @ Vgs
33 nC @ 10 V
Height
16.3mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
País de Origem
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
R$ 31,21
Each (In a Tube of 800) (Sem VAT)
800
R$ 31,21
Each (In a Tube of 800) (Sem VAT)
800
Comprar em grandes quantidades
| Quantidade | Preço unitário | Per Tubo |
|---|---|---|
| 800 - 800 | R$ 31,21 | R$ 24.968,00 |
| 1600 - 2400 | R$ 26,83 | R$ 21.464,00 |
| 3200 - 4800 | R$ 26,47 | R$ 21.176,00 |
| 5600+ | R$ 25,85 | R$ 20.680,00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificações
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
144 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
4.7mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.67mm
Typical Gate Charge @ Vgs
33 nC @ 10 V
Height
16.3mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
País de Origem
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products