onsemi SuperFET II N-Channel MOSFET, 4.5 A, 600 V, 3-Pin IPAK FCU900N60Z

Nº de Estoque RS: 774-1124PMarca: onsemiPart Number: FCU900N60Z
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Documentos Técnicos

Especificações

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

4.5 A

Maximum Drain Source Voltage

600 V

Series

SuperFET II

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

900 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

52 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+30 V

Transistor Material

Si

Number of Elements per Chip

1

Length

6.8mm

Typical Gate Charge @ Vgs

13.1 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

2.5mm

Height

6.3mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor

Fairchild added the SuperFET® II high-voltage power MOSFET family using the Super Junction Technology. It provides best-in-class robust body diode performance in AC-DC Switch Mode Power Supplies (SMPS) applications such as servers, telecom, computing, industrial power supply, UPS/ESS, solar inverter, lighting applications, which require high power density, system efficiency and reliability.
Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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onsemi SuperFET II N-Channel MOSFET, 4.5 A, 600 V, 3-Pin IPAK FCU900N60Z
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P.O.A.

Each (Supplied in a Tube) (Sem VAT)

onsemi SuperFET II N-Channel MOSFET, 4.5 A, 600 V, 3-Pin IPAK FCU900N60Z
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Selecione o tipo de embalagem

Informações de estoque temporariamente indisponíveis.

Verifique novamente mais tarde.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

4.5 A

Maximum Drain Source Voltage

600 V

Series

SuperFET II

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

900 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

52 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+30 V

Transistor Material

Si

Number of Elements per Chip

1

Length

6.8mm

Typical Gate Charge @ Vgs

13.1 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

2.5mm

Height

6.3mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor

Fairchild added the SuperFET® II high-voltage power MOSFET family using the Super Junction Technology. It provides best-in-class robust body diode performance in AC-DC Switch Mode Power Supplies (SMPS) applications such as servers, telecom, computing, industrial power supply, UPS/ESS, solar inverter, lighting applications, which require high power density, system efficiency and reliability.
Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more