onsemi PowerTrench Dual N-Channel MOSFET, 750 mA, 30 V, 6-Pin SOT-363 FDG8850NZ

Nº de Estoque RS: 671-0362PMarca: onsemiPart Number: FDG8850NZ
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Documentos Técnicos

Especificações

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

750 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-363

Series

PowerTrench

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.65V

Maximum Power Dissipation

360 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-12 V, +12 V

Width

1.25mm

Transistor Material

Si

Number of Elements per Chip

2

Length

2mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

1.03 nC @ 4.5 V

Height

1mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor

ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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P.O.A.

Each (Supplied on a Reel) (Sem VAT)

onsemi PowerTrench Dual N-Channel MOSFET, 750 mA, 30 V, 6-Pin SOT-363 FDG8850NZ
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P.O.A.

Each (Supplied on a Reel) (Sem VAT)

onsemi PowerTrench Dual N-Channel MOSFET, 750 mA, 30 V, 6-Pin SOT-363 FDG8850NZ

Informações de estoque temporariamente indisponíveis.

Selecione o tipo de embalagem

Informações de estoque temporariamente indisponíveis.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

750 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-363

Series

PowerTrench

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.65V

Maximum Power Dissipation

360 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-12 V, +12 V

Width

1.25mm

Transistor Material

Si

Number of Elements per Chip

2

Length

2mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

1.03 nC @ 4.5 V

Height

1mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor

ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more