onsemi PowerTrench P-Channel MOSFET, 22 A, 150 V, 8-Pin PQFN8 FDMS86263P

Nº de Estoque RS: 864-8486Marca: onsemiPart Number: FDMS86263P
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Documentos Técnicos

Especificações

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

22 A

Maximum Drain Source Voltage

150 V

Series

PowerTrench

Package Type

PQFN8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

94 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

104 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Width

5.85mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

45 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.05mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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Informações de estoque temporariamente indisponíveis.

R$ 265,55

R$ 53,11 Each (In a Pack of 5) (Sem VAT)

onsemi PowerTrench P-Channel MOSFET, 22 A, 150 V, 8-Pin PQFN8 FDMS86263P
Selecione o tipo de embalagem

R$ 265,55

R$ 53,11 Each (In a Pack of 5) (Sem VAT)

onsemi PowerTrench P-Channel MOSFET, 22 A, 150 V, 8-Pin PQFN8 FDMS86263P
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

Informações de estoque temporariamente indisponíveis.

Verifique novamente mais tarde.

QuantidadePreço unitárioPer Pacote
5 - 45R$ 53,11R$ 265,55
50 - 95R$ 46,46R$ 232,30
100+R$ 40,91R$ 204,55

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

22 A

Maximum Drain Source Voltage

150 V

Series

PowerTrench

Package Type

PQFN8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

94 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

104 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Width

5.85mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

45 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.05mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more