onsemi FGH60T65SQD-F155, P-Channel IGBT, 60 A 650 V, 3-Pin TO-247 G03, Through Hole
Documentos Técnicos
Especificações
Brand
onsemiMaximum Continuous Collector Current
60 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
333 W
Number of Transistors
1
Package Type
TO-247 G03
Mounting Type
Through Hole
Channel Type
P
Pin Count
3
Transistor Configuration
Single
Dimensions
15.87 x 4.82 x 20.82mm
Minimum Operating Temperature
-55 °C
Gate Capacitance
3813pF
Maximum Operating Temperature
+175 °C
Energy Rating
50mJ
País de Origem
China
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R$ 2.336,10
R$ 77,87 Each (In a Tube of 30) (Sem VAT)
30
R$ 2.336,10
R$ 77,87 Each (In a Tube of 30) (Sem VAT)
30
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificações
Brand
onsemiMaximum Continuous Collector Current
60 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
333 W
Number of Transistors
1
Package Type
TO-247 G03
Mounting Type
Through Hole
Channel Type
P
Pin Count
3
Transistor Configuration
Single
Dimensions
15.87 x 4.82 x 20.82mm
Minimum Operating Temperature
-55 °C
Gate Capacitance
3813pF
Maximum Operating Temperature
+175 °C
Energy Rating
50mJ
País de Origem
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products