Documentos Técnicos
Especificações
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
8 A
Maximum Collector Emitter Voltage
400 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Maximum Power Dissipation
80 W
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Emitter Base Voltage
9 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
10.67 x 9.65 x 4.83mm
Maximum Operating Temperature
+150 °C
País de Origem
China
Detalhes do produto
High Voltage NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
P.O.A.
Each (Supplied on a Reel) (Sem VAT)
Embalagem de Produção (Bobina)
10
P.O.A.
Each (Supplied on a Reel) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
Embalagem de Produção (Bobina)
10
Informações de estoque temporariamente indisponíveis.
Documentos Técnicos
Especificações
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
8 A
Maximum Collector Emitter Voltage
400 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Maximum Power Dissipation
80 W
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Emitter Base Voltage
9 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
10.67 x 9.65 x 4.83mm
Maximum Operating Temperature
+150 °C
País de Origem
China
Detalhes do produto
High Voltage NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.


