Documentos Técnicos
Especificações
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
12 A
Maximum Collector Emitter Voltage
400 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
100 W
Minimum DC Current Gain
8, 15
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
9.9 x 4.5 x 9.2mm
Detalhes do produto
High Voltage NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
R$ 1.288,00
R$ 25,76 Each (In a Tube of 50) (Sem VAT)
50
R$ 1.288,00
R$ 25,76 Each (In a Tube of 50) (Sem VAT)
50
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
Quantidade | Preço unitário | Per Tubo |
---|---|---|
50 - 50 | R$ 25,76 | R$ 1.288,00 |
100+ | R$ 19,56 | R$ 978,00 |
Documentos Técnicos
Especificações
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
12 A
Maximum Collector Emitter Voltage
400 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
100 W
Minimum DC Current Gain
8, 15
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
9.9 x 4.5 x 9.2mm
Detalhes do produto
High Voltage NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.