ON Semiconductor, FJP2160DTU, Emmitter Switched, NPN Silicon Transistor 2 A 2.21V, 3-Pin TO-220
Documentos Técnicos
Especificações
Brand
ON SemiconductorTransistor Type
NPN
Maximum DC Collector Current
2 A
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
100 W
Minimum DC Current Gain
20
Maximum Base Current
1A
Pin Count
3
Category
Silicon Transistor
Height
15.95mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+125 °C
Dimensions
9.9 x 4.5 x 15.95mm
Length
9.9mm
Detalhes do produto
ESBC™ Power Transistor, Fairchild Semiconductor
Bipolar NPN power transistors designed for use in ESBC™ (Emitter-Switched Bipolar/MOSFET Cascode) configurations together with appropriate power MOSFET devices. This power switch configuration provides increased efficiency, flexibility and robustness and driving power is minimized due to the absence of Miller capacitance in the design.
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
P.O.A.
Each (In a Pack of 5) (Sem VAT)
Padrão
5
P.O.A.
Each (In a Pack of 5) (Sem VAT)
Padrão
5
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificações
Brand
ON SemiconductorTransistor Type
NPN
Maximum DC Collector Current
2 A
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
100 W
Minimum DC Current Gain
20
Maximum Base Current
1A
Pin Count
3
Category
Silicon Transistor
Height
15.95mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+125 °C
Dimensions
9.9 x 4.5 x 15.95mm
Length
9.9mm
Detalhes do produto
ESBC™ Power Transistor, Fairchild Semiconductor
Bipolar NPN power transistors designed for use in ESBC™ (Emitter-Switched Bipolar/MOSFET Cascode) configurations together with appropriate power MOSFET devices. This power switch configuration provides increased efficiency, flexibility and robustness and driving power is minimized due to the absence of Miller capacitance in the design.
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products