onsemi HGTG20N60A4 IGBT, 70 A 600 V, 3-Pin TO-247, Through Hole

Nº de Estoque RS: 671-5424PMarca: onsemiPart Number: HGTG20N60A4
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Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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onsemi HGTG20N60A4 IGBT, 70 A 600 V, 3-Pin TO-247, Through Hole

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P.O.A.

onsemi HGTG20N60A4 IGBT, 70 A 600 V, 3-Pin TO-247, Through Hole

Informações de estoque temporariamente indisponíveis.

1

Disponível em múltiplos de 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

Informações de estoque temporariamente indisponíveis.

Ideate. Create. Collaborate

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  • Download 3D Models, Schematics and Footprints from more than a million products
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Documentos Técnicos

Detalhes do produto

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more