Documentos Técnicos
Especificações
Brand
onsemiMaximum Continuous Collector Current
10 A
Maximum Collector Emitter Voltage
450 V
Maximum Gate Emitter Voltage
±14V
Maximum Power Dissipation
130 W
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
6.73 x 6.22 x 2.39mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Detalhes do produto
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
R$ 30,23
Each (In a Pack of 5) (Sem VAT)
5
R$ 30,23
Each (In a Pack of 5) (Sem VAT)
5
Comprar em grandes quantidades
Quantidade | Preço unitário | Per Pacote |
---|---|---|
5 - 5 | R$ 30,23 | R$ 151,15 |
10 - 95 | R$ 29,86 | R$ 149,30 |
100 - 245 | R$ 29,60 | R$ 148,00 |
250 - 495 | R$ 29,17 | R$ 145,85 |
500+ | R$ 29,00 | R$ 145,00 |
Documentos Técnicos
Especificações
Brand
onsemiMaximum Continuous Collector Current
10 A
Maximum Collector Emitter Voltage
450 V
Maximum Gate Emitter Voltage
±14V
Maximum Power Dissipation
130 W
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
6.73 x 6.22 x 2.39mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Detalhes do produto
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.