Documentos Técnicos
Especificações
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
500 mA
Maximum Collector Emitter Voltage
300 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
625 mW
Minimum DC Current Gain
40
Transistor Configuration
Single
Maximum Collector Base Voltage
300 V
Maximum Emitter Base Voltage
6 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
4.58 x 3.86 x 4.58mm
País de Origem
China
Detalhes do produto
High Voltage NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
R$ 44,40
R$ 4,44 Each (In a Pack of 10) (Sem VAT)
Padrão
10
R$ 44,40
R$ 4,44 Each (In a Pack of 10) (Sem VAT)
Padrão
10
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
Quantidade | Preço unitário | Per Pacote |
---|---|---|
10 - 90 | R$ 4,44 | R$ 44,40 |
100 - 240 | R$ 1,93 | R$ 19,30 |
250+ | R$ 1,91 | R$ 19,10 |
Documentos Técnicos
Especificações
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
500 mA
Maximum Collector Emitter Voltage
300 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
625 mW
Minimum DC Current Gain
40
Transistor Configuration
Single
Maximum Collector Base Voltage
300 V
Maximum Emitter Base Voltage
6 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
4.58 x 3.86 x 4.58mm
País de Origem
China
Detalhes do produto
High Voltage NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.