Documentos Técnicos
Especificações
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
2 A
Maximum Collector Emitter Voltage
100 V
Maximum Emitter Base Voltage
5 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
4 V
Maximum Collector Base Voltage
100 V
Maximum Collector Emitter Saturation Voltage
3 V
Maximum Collector Cut-off Current
20µA
Dimensions
6.73 x 2.38 x 6.35mm
Maximum Power Dissipation
20 W
Minimum Operating Temperature
-65 °C
Maximum Operating Temperature
+150 °C
Length
6.73mm
Height
6.35mm
Width
2.38mm
Detalhes do produto
NPN Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
P.O.A.
Embalagem de Produção (Tubo)
15
P.O.A.
Embalagem de Produção (Tubo)
15
Documentos Técnicos
Especificações
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
2 A
Maximum Collector Emitter Voltage
100 V
Maximum Emitter Base Voltage
5 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
4 V
Maximum Collector Base Voltage
100 V
Maximum Collector Emitter Saturation Voltage
3 V
Maximum Collector Cut-off Current
20µA
Dimensions
6.73 x 2.38 x 6.35mm
Maximum Power Dissipation
20 W
Minimum Operating Temperature
-65 °C
Maximum Operating Temperature
+150 °C
Length
6.73mm
Height
6.35mm
Width
2.38mm
Detalhes do produto
NPN Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.