Documentos Técnicos
Especificações
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
10 to 40mA
Maximum Drain Source Voltage
20 V
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.9 x 1.3 x 1.04mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
1.04mm
Width
1.3mm
Detalhes do produto
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
R$ 252,00
R$ 5,04 Each (In a Pack of 50) (Sem VAT)
Padrão
50
R$ 252,00
R$ 5,04 Each (In a Pack of 50) (Sem VAT)
Padrão
50
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
Quantidade | Preço unitário | Per Pacote |
---|---|---|
50 - 450 | R$ 5,04 | R$ 252,00 |
500 - 950 | R$ 4,38 | R$ 219,00 |
1000+ | R$ 3,86 | R$ 193,00 |
Documentos Técnicos
Especificações
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
10 to 40mA
Maximum Drain Source Voltage
20 V
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.9 x 1.3 x 1.04mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
1.04mm
Width
1.3mm
Detalhes do produto
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.