Documentos Técnicos
Especificações
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
min. 5mA
Maximum Gate Source Voltage
-35 V
Maximum Drain Gate Voltage
35V
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
50 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Drain Gate On-Capacitance
28pF
Source Gate On-Capacitance
28pF
Dimensions
2.92 x 1.3 x 0.93mm
Width
1.3mm
Height
0.93mm
Minimum Operating Temperature
-55 °C
Length
2.92mm
Maximum Operating Temperature
+150 °C
Detalhes do produto
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
R$ 93,25
R$ 3,73 Each (In a Pack of 25) (Sem VAT)
Padrão
25
R$ 93,25
R$ 3,73 Each (In a Pack of 25) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
Padrão
25
Informações de estoque temporariamente indisponíveis.
| Quantidade | Preço unitário | Per Pacote |
|---|---|---|
| 25 - 75 | R$ 3,73 | R$ 93,25 |
| 100 - 225 | R$ 3,26 | R$ 81,50 |
| 250 - 475 | R$ 2,86 | R$ 71,50 |
| 500 - 975 | R$ 2,56 | R$ 64,00 |
| 1000+ | R$ 2,36 | R$ 59,00 |
Documentos Técnicos
Especificações
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
min. 5mA
Maximum Gate Source Voltage
-35 V
Maximum Drain Gate Voltage
35V
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
50 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Drain Gate On-Capacitance
28pF
Source Gate On-Capacitance
28pF
Dimensions
2.92 x 1.3 x 0.93mm
Width
1.3mm
Height
0.93mm
Minimum Operating Temperature
-55 °C
Length
2.92mm
Maximum Operating Temperature
+150 °C
Detalhes do produto
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.


