Documentos Técnicos
Especificações
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
0.3 to 1.5mA
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Configuration
Single
Transistor Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.92 x 1.3 x 0.93mm
Maximum Operating Temperature
+150 °C
Length
2.92mm
Height
0.93mm
Width
1.3mm
Minimum Operating Temperature
-55 °C
Detalhes do produto
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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R$ 5,17
Each (In a Pack of 25) (Sem VAT)
Padrão
25
R$ 5,17
Each (In a Pack of 25) (Sem VAT)
Padrão
25
Comprar em grandes quantidades
Quantidade | Preço unitário | Per Pacote |
---|---|---|
25 - 75 | R$ 5,17 | R$ 129,25 |
100 - 225 | R$ 4,55 | R$ 113,75 |
250 - 475 | R$ 3,97 | R$ 99,25 |
500 - 975 | R$ 3,54 | R$ 88,50 |
1000+ | R$ 3,30 | R$ 82,50 |
Documentos Técnicos
Especificações
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
0.3 to 1.5mA
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Configuration
Single
Transistor Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.92 x 1.3 x 0.93mm
Maximum Operating Temperature
+150 °C
Length
2.92mm
Height
0.93mm
Width
1.3mm
Minimum Operating Temperature
-55 °C
Detalhes do produto
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.