Documentos Técnicos
Especificações
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
500 mA
Maximum Collector Emitter Voltage
40 V
Maximum Emitter Base Voltage
12 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
2
Minimum DC Current Gain
10000
Maximum Base Emitter Saturation Voltage
2 V
Maximum Collector Base Voltage
40 V
Maximum Collector Emitter Saturation Voltage
1.5 V
Maximum Collector Cut-off Current
50nA
Height
1.01mm
Width
1.4mm
Maximum Power Dissipation
300 mW
Minimum Operating Temperature
-55 °C
Dimensions
3.04 x 1.4 x 1.01mm
Maximum Operating Temperature
+150 °C
Length
3.04mm
País de Origem
China
Detalhes do produto
NPN Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
P.O.A.
3000
P.O.A.
3000
Documentos Técnicos
Especificações
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
500 mA
Maximum Collector Emitter Voltage
40 V
Maximum Emitter Base Voltage
12 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
2
Minimum DC Current Gain
10000
Maximum Base Emitter Saturation Voltage
2 V
Maximum Collector Base Voltage
40 V
Maximum Collector Emitter Saturation Voltage
1.5 V
Maximum Collector Cut-off Current
50nA
Height
1.01mm
Width
1.4mm
Maximum Power Dissipation
300 mW
Minimum Operating Temperature
-55 °C
Dimensions
3.04 x 1.4 x 1.01mm
Maximum Operating Temperature
+150 °C
Length
3.04mm
País de Origem
China
Detalhes do produto
NPN Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.