onsemi N-Channel MOSFET, 20 A, 60 V, 3-Pin DPAK NTD5867NLT4G

Nº de Estoque RS: 719-2901Marca: onsemiPart Number: NTD5867NLT4G
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Documentos Técnicos

Especificações

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

50 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

36 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

6.73mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

15 nC @ 10 V

Width

6.22mm

Height

2.38mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Informações de estoque temporariamente indisponíveis.

R$ 77,20

R$ 15,44 Each (In a Pack of 5) (Sem VAT)

onsemi N-Channel MOSFET, 20 A, 60 V, 3-Pin DPAK NTD5867NLT4G
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R$ 77,20

R$ 15,44 Each (In a Pack of 5) (Sem VAT)

onsemi N-Channel MOSFET, 20 A, 60 V, 3-Pin DPAK NTD5867NLT4G
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

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QuantidadePreço unitárioPer Pacote
5 - 45R$ 15,44R$ 77,20
50 - 95R$ 13,51R$ 67,55
100 - 495R$ 11,88R$ 59,40
500 - 995R$ 10,57R$ 52,85
1000+R$ 9,78R$ 48,90

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

50 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

36 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

6.73mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

15 nC @ 10 V

Width

6.22mm

Height

2.38mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more