onsemi P-Channel MOSFET, 760 mA, 20 V, 3-Pin SOT-523 NTE4151PT1G

Nº de Estoque RS: 780-0554Marca: onsemiPart Number: NTE4151PT1G
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Documentos Técnicos

Especificações

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

760 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-523 (SC-89)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

310 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-6 V, +6 V

Transistor Material

Si

Width

0.95mm

Number of Elements per Chip

1

Length

1.7mm

Typical Gate Charge @ Vgs

2.1 nC @ 5 V

Maximum Operating Temperature

+150 °C

Height

0.8mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

P-Channel Power MOSFET, 20V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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R$ 173,00

R$ 3,46 Each (In a Pack of 50) (Sem VAT)

onsemi P-Channel MOSFET, 760 mA, 20 V, 3-Pin SOT-523 NTE4151PT1G
Selecione o tipo de embalagem

R$ 173,00

R$ 3,46 Each (In a Pack of 50) (Sem VAT)

onsemi P-Channel MOSFET, 760 mA, 20 V, 3-Pin SOT-523 NTE4151PT1G

Informações de estoque temporariamente indisponíveis.

Selecione o tipo de embalagem

Informações de estoque temporariamente indisponíveis.

QuantidadePreço unitárioPer Pacote
50 - 450R$ 3,46R$ 173,00
500 - 950R$ 3,00R$ 150,00
1000+R$ 2,64R$ 132,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

760 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-523 (SC-89)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

310 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-6 V, +6 V

Transistor Material

Si

Width

0.95mm

Number of Elements per Chip

1

Length

1.7mm

Typical Gate Charge @ Vgs

2.1 nC @ 5 V

Maximum Operating Temperature

+150 °C

Height

0.8mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

P-Channel Power MOSFET, 20V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more