onsemi P-Channel MOSFET, 6.7 A, 20 V, 8-Pin ChipFET NTHS4101PT1G

Nº de Estoque RS: 780-0595Marca: onsemiPart Number: NTHS4101PT1G
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Documentos Técnicos

Especificações

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

6.7 A

Maximum Drain Source Voltage

20 V

Package Type

ChipFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

52 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Maximum Operating Temperature

+150 °C

Width

1.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.1mm

Typical Gate Charge @ Vgs

25 nC @ 4.5 V dc

Height

1.1mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

P-Channel Power MOSFET, 20V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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R$ 79,60

R$ 7,96 Each (In a Pack of 10) (Sem VAT)

onsemi P-Channel MOSFET, 6.7 A, 20 V, 8-Pin ChipFET NTHS4101PT1G
Selecione o tipo de embalagem

R$ 79,60

R$ 7,96 Each (In a Pack of 10) (Sem VAT)

onsemi P-Channel MOSFET, 6.7 A, 20 V, 8-Pin ChipFET NTHS4101PT1G

Informações de estoque temporariamente indisponíveis.

Selecione o tipo de embalagem

Informações de estoque temporariamente indisponíveis.

QuantidadePreço unitárioPer Pacote
10 - 40R$ 7,96R$ 79,60
50 - 190R$ 7,66R$ 76,60
200 - 490R$ 5,42R$ 54,20
500+R$ 5,20R$ 52,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

6.7 A

Maximum Drain Source Voltage

20 V

Package Type

ChipFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

52 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Maximum Operating Temperature

+150 °C

Width

1.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.1mm

Typical Gate Charge @ Vgs

25 nC @ 4.5 V dc

Height

1.1mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

P-Channel Power MOSFET, 20V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more