onsemi Dual N-Channel MOSFET, 250 mA, 30 V, 6-Pin SOT-363 NTJD4001NT1G

Nº de Estoque RS: 121-6305Marca: onsemiPart Number: NTJD4001NT1G
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Documentos Técnicos

Especificações

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

250 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

2.72 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

2

Width

1.35mm

Length

2.2mm

Typical Gate Charge @ Vgs

0.9 nC @ 5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1mm

País de Origem

China

Detalhes do produto

Dual N-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Informações de estoque temporariamente indisponíveis.

R$ 4.740,00

R$ 1,58 Each (On a Reel of 3000) (Sem VAT)

onsemi Dual N-Channel MOSFET, 250 mA, 30 V, 6-Pin SOT-363 NTJD4001NT1G

R$ 4.740,00

R$ 1,58 Each (On a Reel of 3000) (Sem VAT)

onsemi Dual N-Channel MOSFET, 250 mA, 30 V, 6-Pin SOT-363 NTJD4001NT1G
Informações de estoque temporariamente indisponíveis.

Informações de estoque temporariamente indisponíveis.

Verifique novamente mais tarde.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

250 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

2.72 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

2

Width

1.35mm

Length

2.2mm

Typical Gate Charge @ Vgs

0.9 nC @ 5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1mm

País de Origem

China

Detalhes do produto

Dual N-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more