onsemi Dual N-Channel MOSFET, 2.5 A, 30 V, 6-Pin WDFN NTLJD4116NT1G

Nº de Estoque RS: 790-5268Marca: onsemiPart Number: NTLJD4116NT1G
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Documentos Técnicos

Especificações

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

2.5 A

Maximum Drain Source Voltage

30 V

Package Type

WDFN

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.3 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-8 V, +8 V

Length

2mm

Typical Gate Charge @ Vgs

5.4 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Number of Elements per Chip

2

Width

2mm

Minimum Operating Temperature

-55 °C

Height

0.75mm

Detalhes do produto

Dual N-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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R$ 83,40

R$ 8,34 Each (Supplied as a Tape) (Sem VAT)

onsemi Dual N-Channel MOSFET, 2.5 A, 30 V, 6-Pin WDFN NTLJD4116NT1G
Selecione o tipo de embalagem

R$ 83,40

R$ 8,34 Each (Supplied as a Tape) (Sem VAT)

onsemi Dual N-Channel MOSFET, 2.5 A, 30 V, 6-Pin WDFN NTLJD4116NT1G

Informações de estoque temporariamente indisponíveis.

Selecione o tipo de embalagem

Informações de estoque temporariamente indisponíveis.

QuantidadePreço unitárioPer Fita
10 - 90R$ 8,34R$ 83,40
100 - 240R$ 7,30R$ 73,00
250 - 490R$ 6,40R$ 64,00
500 - 990R$ 5,72R$ 57,20
1000+R$ 5,28R$ 52,80

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

2.5 A

Maximum Drain Source Voltage

30 V

Package Type

WDFN

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.3 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-8 V, +8 V

Length

2mm

Typical Gate Charge @ Vgs

5.4 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Number of Elements per Chip

2

Width

2mm

Minimum Operating Temperature

-55 °C

Height

0.75mm

Detalhes do produto

Dual N-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more