onsemi N-Channel MOSFET, 2.4 A, 30 V, 3-Pin SOT-23 NTR4170NT1G

Nº de Estoque RS: 184-1067Marca: onsemiPart Number: NTR4170NT1G
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Documentos Técnicos

Especificações

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

2.4 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.4V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

480 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±12 V

Number of Elements per Chip

1

Width

1.4mm

Length

3.04mm

Typical Gate Charge @ Vgs

4.76 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Height

1.01mm

País de Origem

China

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R$ 5.460,00

R$ 1,82 Each (On a Reel of 3000) (Sem VAT)

onsemi N-Channel MOSFET, 2.4 A, 30 V, 3-Pin SOT-23 NTR4170NT1G

R$ 5.460,00

R$ 1,82 Each (On a Reel of 3000) (Sem VAT)

onsemi N-Channel MOSFET, 2.4 A, 30 V, 3-Pin SOT-23 NTR4170NT1G

Informações de estoque temporariamente indisponíveis.

Informações de estoque temporariamente indisponíveis.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

2.4 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.4V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

480 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±12 V

Number of Elements per Chip

1

Width

1.4mm

Length

3.04mm

Typical Gate Charge @ Vgs

4.76 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Height

1.01mm

País de Origem

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more