P-Channel MOSFET, 3.5 A, 30 V, 3-Pin SOT-23 onsemi NTR4171PG

Nº de Estoque RS: 780-4749Marca: onsemiPart Number: NTR4171PT1G
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Documentos Técnicos

Especificações

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

3.5 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

150 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.4V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.04mm

Typical Gate Charge @ Vgs

15.6 nC @ 10 V, 7.4 nC @ 4.5 V

Width

1.4mm

Minimum Operating Temperature

-55 °C

Height

1.01mm

Detalhes do produto

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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R$ 5,42

Each (In a Pack of 25) (Sem VAT)

P-Channel MOSFET, 3.5 A, 30 V, 3-Pin SOT-23 onsemi NTR4171PG
Selecione o tipo de embalagem

R$ 5,42

Each (In a Pack of 25) (Sem VAT)

P-Channel MOSFET, 3.5 A, 30 V, 3-Pin SOT-23 onsemi NTR4171PG
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

Comprar em grandes quantidades

QuantidadePreço unitárioPer Pacote
25 - 25R$ 5,42R$ 135,50
50 - 100R$ 5,36R$ 134,00
125 - 225R$ 5,32R$ 133,00
250 - 475R$ 5,23R$ 130,75
500+R$ 5,15R$ 128,75

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

3.5 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

150 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.4V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.04mm

Typical Gate Charge @ Vgs

15.6 nC @ 10 V, 7.4 nC @ 4.5 V

Width

1.4mm

Minimum Operating Temperature

-55 °C

Height

1.01mm

Detalhes do produto

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more