onsemi P-Channel MOSFET, 1.5 A, 8 V, 3-Pin SOT-323 NTS2101PT1G

Nº de Estoque RS: 780-4755Marca: onsemiPart Number: NTS2101PT1G
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Documentos Técnicos

Especificações

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

1.5 A

Maximum Drain Source Voltage

8 V

Package Type

SOT-323

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

210 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.45V

Maximum Power Dissipation

330 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Maximum Operating Temperature

+150 °C

Width

1.35mm

Transistor Material

Si

Number of Elements per Chip

1

Length

2.2mm

Typical Gate Charge @ Vgs

6.4 nC @ 5 V

Height

0.9mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

P-Channel Power MOSFET, 8V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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R$ 53,00

R$ 2,12 Each (In a Pack of 25) (Sem VAT)

onsemi P-Channel MOSFET, 1.5 A, 8 V, 3-Pin SOT-323 NTS2101PT1G
Selecione o tipo de embalagem

R$ 53,00

R$ 2,12 Each (In a Pack of 25) (Sem VAT)

onsemi P-Channel MOSFET, 1.5 A, 8 V, 3-Pin SOT-323 NTS2101PT1G

Informações de estoque temporariamente indisponíveis.

Selecione o tipo de embalagem

Informações de estoque temporariamente indisponíveis.

QuantidadePreço unitárioPer Pacote
25 - 75R$ 2,12R$ 53,00
100 - 225R$ 1,85R$ 46,25
250 - 475R$ 1,66R$ 41,50
500 - 975R$ 1,44R$ 36,00
1000+R$ 1,36R$ 34,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

1.5 A

Maximum Drain Source Voltage

8 V

Package Type

SOT-323

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

210 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.45V

Maximum Power Dissipation

330 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Maximum Operating Temperature

+150 °C

Width

1.35mm

Transistor Material

Si

Number of Elements per Chip

1

Length

2.2mm

Typical Gate Charge @ Vgs

6.4 nC @ 5 V

Height

0.9mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

P-Channel Power MOSFET, 8V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more