P-Channel MOSFET, 1.3 A, 30 V, 3-Pin SOT-323 onsemi NTS4173PT1G

Nº de Estoque RS: 780-4761Marca: onsemiPart Number: NTS4173PT1G
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Documentos Técnicos

Especificações

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

1.3 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-323

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

350 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2.2mm

Typical Gate Charge @ Vgs

10.1 nC @ 10 V, 4.8 nC @ 4.5 V

Width

1.35mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

0.9mm

Detalhes do produto

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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R$ 5,50

Each (Supplied as a Tape) (Sem VAT)

P-Channel MOSFET, 1.3 A, 30 V, 3-Pin SOT-323 onsemi NTS4173PT1G
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R$ 5,50

Each (Supplied as a Tape) (Sem VAT)

P-Channel MOSFET, 1.3 A, 30 V, 3-Pin SOT-323 onsemi NTS4173PT1G
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

Comprar em grandes quantidades

QuantidadePreço unitárioPer Fita
25 - 25R$ 5,50R$ 137,50
50 - 100R$ 3,97R$ 99,25
125 - 225R$ 2,64R$ 66,00
250+R$ 2,42R$ 60,50

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

1.3 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-323

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

350 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2.2mm

Typical Gate Charge @ Vgs

10.1 nC @ 10 V, 4.8 nC @ 4.5 V

Width

1.35mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

0.9mm

Detalhes do produto

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more