Documentos Técnicos
Especificações
Brand
onsemiMounting Type
Through Hole
Package Type
TO-220AB
Maximum Continuous Forward Current
40A
Peak Reverse Repetitive Voltage
120V
Diode Configuration
Common Cathode
Diode Type
Schottky
Pin Count
3
Maximum Forward Voltage Drop
430mV
Number of Elements per Chip
2
Diode Technology
Schottky
Peak Non-Repetitive Forward Surge Current
250A
País de Origem
China
Detalhes do produto
ON Semiconductor Schottky Barrier Diodes
This ON Semiconductor Schottky power rectifier employs the Schottky barrier principle using a barrier metal to create the best forward voltage drop−reverse current exchange. Suitable for low voltage, high-frequency rectification as well as a freewheeling and polarity protection diode in a range of surface mount applications wherever a more compact size and weight are key.
Standards
Products with NSV-, SBR- or S-prefixed Manufacturer Part Nos are AEC-Q101 automotive qualified.
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P.O.A.
50
P.O.A.
50
Documentos Técnicos
Especificações
Brand
onsemiMounting Type
Through Hole
Package Type
TO-220AB
Maximum Continuous Forward Current
40A
Peak Reverse Repetitive Voltage
120V
Diode Configuration
Common Cathode
Diode Type
Schottky
Pin Count
3
Maximum Forward Voltage Drop
430mV
Number of Elements per Chip
2
Diode Technology
Schottky
Peak Non-Repetitive Forward Surge Current
250A
País de Origem
China
Detalhes do produto
ON Semiconductor Schottky Barrier Diodes
This ON Semiconductor Schottky power rectifier employs the Schottky barrier principle using a barrier metal to create the best forward voltage drop−reverse current exchange. Suitable for low voltage, high-frequency rectification as well as a freewheeling and polarity protection diode in a range of surface mount applications wherever a more compact size and weight are key.
Standards
Products with NSV-, SBR- or S-prefixed Manufacturer Part Nos are AEC-Q101 automotive qualified.