Documentos Técnicos
Especificações
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
75 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
11 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
90 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
9.2mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10mm
Typical Gate Charge @ Vgs
280 nC @ 10 V
Height
4.5mm
País de Origem
Korea, Republic Of
Detalhes do produto
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
P.O.A.
800
P.O.A.
800
Documentos Técnicos
Especificações
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
75 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
11 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
90 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
9.2mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10mm
Typical Gate Charge @ Vgs
280 nC @ 10 V
Height
4.5mm
País de Origem
Korea, Republic Of
Detalhes do produto