Documentos Técnicos
Especificações
Brand
onsemiTransistor Type
PNP
Maximum Continuous Collector Current
25 (Continuous) A, 40 (Peak) A
Maximum Collector Emitter Voltage
100 V dc
Maximum Emitter Base Voltage
5 V dc
Package Type
SOT-93
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
15
Maximum Collector Base Voltage
100 V dc
Maximum Collector Emitter Saturation Voltage
4 V dc
Maximum Collector Cut-off Current
1mA
Height
20.35mm
Maximum Power Dissipation
125 W
Minimum Operating Temperature
-65 °C
Dimensions
15.2 x 4.9 x 20.35mm
Width
4.9mm
Maximum Operating Temperature
+150 °C
Length
15.2mm
Base Current
5A
País de Origem
China
Informações de estoque temporariamente indisponíveis.
P.O.A.
Each (Supplied in a Tube) (Sem VAT)
Embalagem de Produção (Tubo)
2
P.O.A.
Each (Supplied in a Tube) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
Embalagem de Produção (Tubo)
2
Documentos Técnicos
Especificações
Brand
onsemiTransistor Type
PNP
Maximum Continuous Collector Current
25 (Continuous) A, 40 (Peak) A
Maximum Collector Emitter Voltage
100 V dc
Maximum Emitter Base Voltage
5 V dc
Package Type
SOT-93
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
15
Maximum Collector Base Voltage
100 V dc
Maximum Collector Emitter Saturation Voltage
4 V dc
Maximum Collector Cut-off Current
1mA
Height
20.35mm
Maximum Power Dissipation
125 W
Minimum Operating Temperature
-65 °C
Dimensions
15.2 x 4.9 x 20.35mm
Width
4.9mm
Maximum Operating Temperature
+150 °C
Length
15.2mm
Base Current
5A
País de Origem
China


