Documentos Técnicos
Especificações
Spectrums Detected
Infrared, Ultraviolet, Visible Light
Number of Channels
1
Maximum Light Current
12.5µA
Maximum Dark Current
3nA
Angle of Half Sensitivity
120 °
Polarity
NPN
Number of Pins
2
Mounting Type
Surface Mount
Package Type
SMD
Dimensions
2.1 x 1.35 x 0.9mm
Collector Current
20mA
Spectral Range of Sensitivity
350 → 950 nm
Maximum Wavelength Detected
950nm
Minimum Wavelength Detected
350nm
Width
1.35mm
Height
0.9mm
Length
2.1mm
País de Origem
Taiwan, Province Of China
Detalhes do produto
Ambient Light Sensors - Vlambda
A range of NPN silicon phototransistors from OSRAM Opto Semiconductors, with improved V lambda characteristics. These compact phototransistors are suitable for a wide range of applications including; ambient light detectors, exposure meters for both daylight and artificial light, sensor for backlight dimming and for control and drive circuits.
Ambient Light Sensors, OSRAM Opto Semiconductors
R$ 187,40
R$ 9,37 Each (In a Pack of 20) (Sem VAT)
Padrão
20
R$ 187,40
R$ 9,37 Each (In a Pack of 20) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
Padrão
20
Informações de estoque temporariamente indisponíveis.
| Quantidade | Preço unitário | Per Pacote |
|---|---|---|
| 20 - 380 | R$ 9,37 | R$ 187,40 |
| 400 - 780 | R$ 5,69 | R$ 113,80 |
| 800 - 1480 | R$ 4,74 | R$ 94,80 |
| 1500 - 2980 | R$ 4,27 | R$ 85,40 |
| 3000+ | R$ 4,25 | R$ 85,00 |
Documentos Técnicos
Especificações
Spectrums Detected
Infrared, Ultraviolet, Visible Light
Number of Channels
1
Maximum Light Current
12.5µA
Maximum Dark Current
3nA
Angle of Half Sensitivity
120 °
Polarity
NPN
Number of Pins
2
Mounting Type
Surface Mount
Package Type
SMD
Dimensions
2.1 x 1.35 x 0.9mm
Collector Current
20mA
Spectral Range of Sensitivity
350 → 950 nm
Maximum Wavelength Detected
950nm
Minimum Wavelength Detected
350nm
Width
1.35mm
Height
0.9mm
Length
2.1mm
País de Origem
Taiwan, Province Of China
Detalhes do produto
Ambient Light Sensors - Vlambda
A range of NPN silicon phototransistors from OSRAM Opto Semiconductors, with improved V lambda characteristics. These compact phototransistors are suitable for a wide range of applications including; ambient light detectors, exposure meters for both daylight and artificial light, sensor for backlight dimming and for control and drive circuits.


