Renesas Electronics RJH65T47DPQ-A0#T0 IGBT, 90 A 650 V, 3-Pin TO-247A, Through Hole

Nº de Estoque RS: 124-0910Marca: Renesas ElectronicsPart Number: RJH65T47DPQ-A0#T0
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Documentos Técnicos

Especificações

Maximum Continuous Collector Current

90 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±30V

Maximum Power Dissipation

375 W

Package Type

TO-247A

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.94 x 5.02 x 21.13mm

Gate Capacitance

3000pF

Maximum Operating Temperature

+175 °C

País de Origem

China

Detalhes do produto

IGBT Discretes, Renesas Electronics

IGBT Discretes & Modules

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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Renesas Electronics RJH65T47DPQ-A0#T0 IGBT, 90 A 650 V, 3-Pin TO-247A, Through Hole
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P.O.A.

Renesas Electronics RJH65T47DPQ-A0#T0 IGBT, 90 A 650 V, 3-Pin TO-247A, Through Hole
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Maximum Continuous Collector Current

90 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±30V

Maximum Power Dissipation

375 W

Package Type

TO-247A

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.94 x 5.02 x 21.13mm

Gate Capacitance

3000pF

Maximum Operating Temperature

+175 °C

País de Origem

China

Detalhes do produto

IGBT Discretes, Renesas Electronics

IGBT Discretes & Modules

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more