Documentos Técnicos
Especificações
Brand
Renesas ElectronicsMaximum Continuous Collector Current
90 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
375 W
Package Type
TO-247A
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.94 x 5.02 x 21.13mm
Gate Capacitance
3000pF
Maximum Operating Temperature
+175 °C
País de Origem
China
Detalhes do produto
IGBT Discretes, Renesas Electronics
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
P.O.A.
2
P.O.A.
2
Documentos Técnicos
Especificações
Brand
Renesas ElectronicsMaximum Continuous Collector Current
90 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
375 W
Package Type
TO-247A
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.94 x 5.02 x 21.13mm
Gate Capacitance
3000pF
Maximum Operating Temperature
+175 °C
País de Origem
China
Detalhes do produto
IGBT Discretes, Renesas Electronics
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.