ROHM BSM 2 Type N-Channel SiC Power Module Enhancement, 4-Pin BSM180D12P3C007

Nº de Estoque RS: 144-2259Marca: ROHMPart Number: BSM180D12P3C007
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Documentos Técnicos

Especificações

Brand

ROHM

Product Type

SiC Power Module

Channel Type

Type N

Series

BSM

Pin Count

4

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Width

45.6 mm

Length

122mm

Height

17mm

Number of Elements per Chip

2

País de Origem

Japan

Detalhes do produto

SiC Power Modules, ROHM

The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.

MOSFET Transistors, ROHM Semiconductor

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Informações de estoque temporariamente indisponíveis.

R$ 14.265,43

R$ 14.265,43 Each (Sem VAT)

ROHM BSM 2 Type N-Channel SiC Power Module Enhancement, 4-Pin BSM180D12P3C007

1

Disponível em múltiplos de 1
1R$ 14.265,43
2R$ 28.530,86
3R$ 42.796,29
4R$ 57.061,72
5R$ 71.327,15
6R$ 85.592,58
7R$ 99.858,01
8R$ 114.123,44
9R$ 128.388,87
10R$ 142.654,30
11R$ 156.919,73
12R$ 171.185,16
13R$ 185.450,59
14R$ 199.716,02
15R$ 213.981,45

R$ 14.265,43

R$ 14.265,43 Each (Sem VAT)

ROHM BSM 2 Type N-Channel SiC Power Module Enhancement, 4-Pin BSM180D12P3C007

Informações de estoque temporariamente indisponíveis.

1

Disponível em múltiplos de 1
1R$ 14.265,43
2R$ 28.530,86
3R$ 42.796,29
4R$ 57.061,72
5R$ 71.327,15
6R$ 85.592,58
7R$ 99.858,01
8R$ 114.123,44
9R$ 128.388,87
10R$ 142.654,30
11R$ 156.919,73
12R$ 171.185,16
13R$ 185.450,59
14R$ 199.716,02
15R$ 213.981,45

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

ROHM

Product Type

SiC Power Module

Channel Type

Type N

Series

BSM

Pin Count

4

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Width

45.6 mm

Length

122mm

Height

17mm

Number of Elements per Chip

2

País de Origem

Japan

Detalhes do produto

SiC Power Modules, ROHM

The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.

MOSFET Transistors, ROHM Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more