ROHM Dual SiC N-Channel SiC Power Module, 180 A, 1200 V, 4-Pin C BSM180D12P3C007

Nº de Estoque RS: 144-2259Marca: ROHMPart Number: BSM180D12P3C007
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Documentos Técnicos

Especificações

Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

1200 V

Series

BSM

Package Type

c

Mounting Type

Surface Mount

Pin Count

4

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.6V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

880 W

Number of Elements per Chip

2

Width

45.6mm

Length

122mm

Transistor Material

SiC

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-40 °C

Height

17mm

País de Origem

Japan

Detalhes do produto

SiC Power Modules, ROHM

The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.

MOSFET Transistors, ROHM Semiconductor

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Informações de estoque temporariamente indisponíveis.

R$ 15.924,32

R$ 15.924,32 Each (Sem VAT)

ROHM Dual SiC N-Channel SiC Power Module, 180 A, 1200 V, 4-Pin C BSM180D12P3C007

1

Disponível em múltiplos de 1
1R$ 15.924,32
2R$ 31.848,64
3R$ 47.772,96
4R$ 63.697,28
5R$ 79.621,60
6R$ 95.545,92
7R$ 111.470,24
8R$ 127.394,56
9R$ 143.318,88
10R$ 159.243,20
11R$ 175.167,52
12R$ 191.091,84
13R$ 207.016,16
14R$ 222.940,48
15R$ 238.864,80

R$ 15.924,32

R$ 15.924,32 Each (Sem VAT)

ROHM Dual SiC N-Channel SiC Power Module, 180 A, 1200 V, 4-Pin C BSM180D12P3C007
Informações de estoque temporariamente indisponíveis.

1

Disponível em múltiplos de 1
1R$ 15.924,32
2R$ 31.848,64
3R$ 47.772,96
4R$ 63.697,28
5R$ 79.621,60
6R$ 95.545,92
7R$ 111.470,24
8R$ 127.394,56
9R$ 143.318,88
10R$ 159.243,20
11R$ 175.167,52
12R$ 191.091,84
13R$ 207.016,16
14R$ 222.940,48
15R$ 238.864,80

Informações de estoque temporariamente indisponíveis.

Verifique novamente mais tarde.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

1200 V

Series

BSM

Package Type

c

Mounting Type

Surface Mount

Pin Count

4

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.6V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

880 W

Number of Elements per Chip

2

Width

45.6mm

Length

122mm

Transistor Material

SiC

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-40 °C

Height

17mm

País de Origem

Japan

Detalhes do produto

SiC Power Modules, ROHM

The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.

MOSFET Transistors, ROHM Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more