ROHM BSM 2 Type N-Channel SiC Power Module, 300 A, 1200 V Enhancement, 4-Pin BSM300D12P2E001

Nº de Estoque RS: 144-2255Marca: ROHMPart Number: BSM300D12P2E001
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Documentos Técnicos

Especificações

Brand

ROHM

Product Type

SiC Power Module

Channel Type

Type N

Maximum Continuous Drain Current Id

300A

Maximum Drain Source Voltage Vds

1200V

Series

BSM

Mount Type

Surface Mount

Pin Count

4

Channel Mode

Enhancement

Maximum Power Dissipation Pd

1875W

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Length

152mm

Height

17mm

Number of Elements per Chip

2

País de Origem

Japan

Detalhes do produto

SiC Power Modules, ROHM

The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.

MOSFET Transistors, ROHM Semiconductor

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Informações de estoque temporariamente indisponíveis.

P.O.A.

Each (In a Tray of 4) (Sem VAT)

ROHM BSM 2 Type N-Channel SiC Power Module, 300 A, 1200 V Enhancement, 4-Pin BSM300D12P2E001

4

Disponível em múltiplos de 4
4P.O.A.
8P.O.A.
12P.O.A.
16P.O.A.
20P.O.A.
24P.O.A.
28P.O.A.
32P.O.A.
36P.O.A.
40P.O.A.
44P.O.A.
48P.O.A.
52P.O.A.
56P.O.A.
60P.O.A.

P.O.A.

Each (In a Tray of 4) (Sem VAT)

ROHM BSM 2 Type N-Channel SiC Power Module, 300 A, 1200 V Enhancement, 4-Pin BSM300D12P2E001

Informações de estoque temporariamente indisponíveis.

4

Disponível em múltiplos de 4
4P.O.A.
8P.O.A.
12P.O.A.
16P.O.A.
20P.O.A.
24P.O.A.
28P.O.A.
32P.O.A.
36P.O.A.
40P.O.A.
44P.O.A.
48P.O.A.
52P.O.A.
56P.O.A.
60P.O.A.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

ROHM

Product Type

SiC Power Module

Channel Type

Type N

Maximum Continuous Drain Current Id

300A

Maximum Drain Source Voltage Vds

1200V

Series

BSM

Mount Type

Surface Mount

Pin Count

4

Channel Mode

Enhancement

Maximum Power Dissipation Pd

1875W

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Length

152mm

Height

17mm

Number of Elements per Chip

2

País de Origem

Japan

Detalhes do produto

SiC Power Modules, ROHM

The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.

MOSFET Transistors, ROHM Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more