ROHM N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-220FM R6520ENX

Nº de Estoque RS: 177-6458Marca: ROHMPart Number: R6520ENX
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Documentos Técnicos

Especificações

Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

650 V

Series

R6520ENX

Package Type

TO-220FM

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

200 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

68 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Number of Elements per Chip

1

Width

4.8mm

Length

10.3mm

Typical Gate Charge @ Vgs

61 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Height

15.4mm

País de Origem

Japan

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Informações de estoque temporariamente indisponíveis.

R$ 132,92

R$ 66,46 Each (In a Pack of 2) (Sem VAT)

ROHM N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-220FM R6520ENX

R$ 132,92

R$ 66,46 Each (In a Pack of 2) (Sem VAT)

ROHM N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-220FM R6520ENX
Informações de estoque temporariamente indisponíveis.

Informações de estoque temporariamente indisponíveis.

Verifique novamente mais tarde.

QuantidadePreço unitárioPer Pacote
2 - 8R$ 66,46R$ 132,92
10 - 48R$ 59,51R$ 119,02
50 - 98R$ 58,64R$ 117,28
100 - 248R$ 57,88R$ 115,76
250+R$ 57,38R$ 114,76

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

650 V

Series

R6520ENX

Package Type

TO-220FM

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

200 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

68 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Number of Elements per Chip

1

Width

4.8mm

Length

10.3mm

Typical Gate Charge @ Vgs

61 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Height

15.4mm

País de Origem

Japan

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more