ROHM RRR040P03 P-Channel MOSFET, 4 A, 30 V, 3-Pin TSMT-3 RQ5E040RPTL

Nº de Estoque RS: 124-6810PMarca: ROHMPart Number: RQ5E040RPTL
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Documentos Técnicos

Especificações

Brand

ROHM

Channel Type

P

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

30 V

Series

RRR040P03

Package Type

TSMT-3

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

72 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1 W

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

2.9mm

Typical Gate Charge @ Vgs

10.5 nC @ 5 V

Maximum Operating Temperature

+150 °C

Height

0.85mm

Forward Diode Voltage

1.2V

Detalhes do produto

P-Channel MOSFET Transistors, ROHM

MOSFET Transistors, ROHM Semiconductor

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P.O.A.

Each (Supplied on a Reel) (Sem VAT)

ROHM RRR040P03 P-Channel MOSFET, 4 A, 30 V, 3-Pin TSMT-3 RQ5E040RPTL
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P.O.A.

Each (Supplied on a Reel) (Sem VAT)

ROHM RRR040P03 P-Channel MOSFET, 4 A, 30 V, 3-Pin TSMT-3 RQ5E040RPTL

Informações de estoque temporariamente indisponíveis.

Selecione o tipo de embalagem

Informações de estoque temporariamente indisponíveis.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

ROHM

Channel Type

P

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

30 V

Series

RRR040P03

Package Type

TSMT-3

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

72 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1 W

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

2.9mm

Typical Gate Charge @ Vgs

10.5 nC @ 5 V

Maximum Operating Temperature

+150 °C

Height

0.85mm

Forward Diode Voltage

1.2V

Detalhes do produto

P-Channel MOSFET Transistors, ROHM

MOSFET Transistors, ROHM Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more