Documentos Técnicos
Especificações
Brand
ROHMChannel Type
P
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
30 V
Series
RQ6E050AT
Package Type
TSMT-6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
38 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Dual Base
Maximum Gate Source Voltage
-18 V, +18 V
Width
1.8mm
Number of Elements per Chip
1
Length
3mm
Typical Gate Charge @ Vgs
20.8 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
0.95mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
País de Origem
Thailand
Detalhes do produto
P-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
R$ 127,25
R$ 5,09 Each (In a Pack of 25) (Sem VAT)
25
R$ 127,25
R$ 5,09 Each (In a Pack of 25) (Sem VAT)
25
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
Documentos Técnicos
Especificações
Brand
ROHMChannel Type
P
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
30 V
Series
RQ6E050AT
Package Type
TSMT-6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
38 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Dual Base
Maximum Gate Source Voltage
-18 V, +18 V
Width
1.8mm
Number of Elements per Chip
1
Length
3mm
Typical Gate Charge @ Vgs
20.8 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
0.95mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
País de Origem
Thailand
Detalhes do produto