Documentos Técnicos
Especificações
Brand
ROHMChannel Type
P
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
100 V
Series
RSJ250P10
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
50 W
Maximum Gate Source Voltage
-20 V, +20 V
Width
9mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.1mm
Typical Gate Charge @ Vgs
60 nC @ 5 V
Maximum Operating Temperature
+150 °C
Height
4.5mm
Forward Diode Voltage
1.2V
País de Origem
Korea, Republic Of
Detalhes do produto
P-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
R$ 190,40
R$ 38,08 Each (In a Pack of 5) (Sem VAT)
Padrão
5
R$ 190,40
R$ 38,08 Each (In a Pack of 5) (Sem VAT)
Padrão
5
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
Quantidade | Preço unitário | Per Pacote |
---|---|---|
5 - 20 | R$ 38,08 | R$ 190,40 |
25 - 45 | R$ 31,25 | R$ 156,25 |
50 - 120 | R$ 30,17 | R$ 150,85 |
125 - 245 | R$ 28,98 | R$ 144,90 |
250+ | R$ 26,12 | R$ 130,60 |
Documentos Técnicos
Especificações
Brand
ROHMChannel Type
P
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
100 V
Series
RSJ250P10
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
50 W
Maximum Gate Source Voltage
-20 V, +20 V
Width
9mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.1mm
Typical Gate Charge @ Vgs
60 nC @ 5 V
Maximum Operating Temperature
+150 °C
Height
4.5mm
Forward Diode Voltage
1.2V
País de Origem
Korea, Republic Of
Detalhes do produto