Semelab TetraFET N-Channel MOSFET, 2 A, 65 V, 8-Pin SOIC D2020UK

Nº de Estoque RS: 738-7711PMarca: SemelabPart Number: D2020UK
brand-logo
Ver tudo em MOSFETs

Documentos Técnicos

Especificações

Brand

Semelab

Channel Type

N

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

65 V

Series

TetraFET

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.08mm

Transistor Material

Si

Number of Elements per Chip

1

Length

4.06mm

Maximum Operating Temperature

+200 °C

Height

2.18mm

País de Origem

United Kingdom

Detalhes do produto

RF MOSFET Transistors, Semelab

MOSFET Transistors, Semelab

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

P.O.A.

Semelab TetraFET N-Channel MOSFET, 2 A, 65 V, 8-Pin SOIC D2020UK
Selecione o tipo de embalagem

P.O.A.

Semelab TetraFET N-Channel MOSFET, 2 A, 65 V, 8-Pin SOIC D2020UK

Informações de estoque temporariamente indisponíveis.

Selecione o tipo de embalagem

Informações de estoque temporariamente indisponíveis.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Semelab

Channel Type

N

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

65 V

Series

TetraFET

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.08mm

Transistor Material

Si

Number of Elements per Chip

1

Length

4.06mm

Maximum Operating Temperature

+200 °C

Height

2.18mm

País de Origem

United Kingdom

Detalhes do produto

RF MOSFET Transistors, Semelab

MOSFET Transistors, Semelab

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more