Documentos Técnicos
Especificações
Brand
Semikron DanfossMaximum Continuous Collector Current
114 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Configuration
Dual Half Bridge
Package Type
SEMITRANS2
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Transistor Configuration
Series
Dimensions
94 x 34 x 30.1mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Detalhes do produto
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
R$ 2.158,61
R$ 2.158,61 Each (Sem VAT)
1
R$ 2.158,61
R$ 2.158,61 Each (Sem VAT)
Informações de estoque temporariamente indisponíveis.
1
Informações de estoque temporariamente indisponíveis.
| Quantidade | Preço unitário |
|---|---|
| 1 - 1 | R$ 2.158,61 |
| 2 - 4 | R$ 2.082,19 |
| 5 - 7 | R$ 2.006,90 |
| 8 - 15 | R$ 1.935,14 |
| 16+ | R$ 1.865,15 |
Documentos Técnicos
Especificações
Brand
Semikron DanfossMaximum Continuous Collector Current
114 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Configuration
Dual Half Bridge
Package Type
SEMITRANS2
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Transistor Configuration
Series
Dimensions
94 x 34 x 30.1mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Detalhes do produto
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.


