Semikron SEMiX603GB12E4p Series IGBT Module, 1.1 kA 1200 V, 11-Pin SEMiX®3p, Through Hole
Documentos Técnicos
Especificações
Brand
SemikronMaximum Continuous Collector Current
1.1 kA
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
20V
Package Type
SEMiX®3p
Configuration
Series
Mounting Type
Through Hole
Channel Type
N
Pin Count
11
Transistor Configuration
Series
Dimensions
150 x 62.4 x 17mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
PRICED TO CLEAR
Yes
Detalhes do produto
SEMiX® Dual IGBT Modules
Dual IGBT Modules from Semikron in modern low-profile SEMiX® packages suitable for half-bridge power control applications. The modules use solder-free spring or press-fit contacts to allow for a gate driver mounted directly on top of the module, saving space and offering greater connection reliability. Typical applications include AC inverter drives, UPS, Electronic Welding and Renewable Energy Systems.
For suitable press-fit gate driver modules see 122-0385 to 122-0387
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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R$ 6.432,29
Each (Sem VAT)
1
R$ 6.432,29
Each (Sem VAT)
1
Comprar em grandes quantidades
| Quantidade | Preço unitário |
|---|---|
| 1 - 1 | R$ 6.432,29 |
| 2+ | R$ 6.400,78 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificações
Brand
SemikronMaximum Continuous Collector Current
1.1 kA
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
20V
Package Type
SEMiX®3p
Configuration
Series
Mounting Type
Through Hole
Channel Type
N
Pin Count
11
Transistor Configuration
Series
Dimensions
150 x 62.4 x 17mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
PRICED TO CLEAR
Yes
Detalhes do produto
SEMiX® Dual IGBT Modules
Dual IGBT Modules from Semikron in modern low-profile SEMiX® packages suitable for half-bridge power control applications. The modules use solder-free spring or press-fit contacts to allow for a gate driver mounted directly on top of the module, saving space and offering greater connection reliability. Typical applications include AC inverter drives, UPS, Electronic Welding and Renewable Energy Systems.
For suitable press-fit gate driver modules see 122-0385 to 122-0387
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products