N-Channel MOSFET, 9 A, 200 V, 3-Pin TO-220 STMicroelectronics IRF630

Nº de Estoque RS: 486-0171Marca: STMicroelectronicsPart Number: IRF630
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Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

200 V

Series

STripFET

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

75 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

31 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.4mm

Width

4.6mm

Transistor Material

Si

Minimum Operating Temperature

-65 °C

Height

9.15mm

Detalhes do produto

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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R$ 25,96

Each (In a Pack of 5) (Sem VAT)

N-Channel MOSFET, 9 A, 200 V, 3-Pin TO-220 STMicroelectronics IRF630
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R$ 25,96

Each (In a Pack of 5) (Sem VAT)

N-Channel MOSFET, 9 A, 200 V, 3-Pin TO-220 STMicroelectronics IRF630
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

Comprar em grandes quantidades

QuantidadePreço unitárioPer Pacote
5 - 20R$ 25,96R$ 129,80
25 - 45R$ 25,06R$ 125,30
50 - 120R$ 22,87R$ 114,35
125 - 245R$ 20,89R$ 104,45
250+R$ 20,12R$ 100,60

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Você pode estar interessado em

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

200 V

Series

STripFET

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

75 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

31 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.4mm

Width

4.6mm

Transistor Material

Si

Minimum Operating Temperature

-65 °C

Height

9.15mm

Detalhes do produto

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
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