Documentos Técnicos
Especificações
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
500 mA
Maximum Collector Emitter Voltage
300 V
Package Type
SOT-32
Mounting Type
Through Hole
Maximum Power Dissipation
2.8 W
Minimum DC Current Gain
30
Transistor Configuration
Single
Maximum Collector Base Voltage
300 V
Maximum Emitter Base Voltage
3 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.8 x 7.8 x 2.7mm
País de Origem
Malaysia
Detalhes do produto
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
Informações de estoque temporariamente indisponíveis.
R$ 403,00
R$ 8,06 Each (In a Tube of 50) (Sem VAT)
50
R$ 403,00
R$ 8,06 Each (In a Tube of 50) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
50
| Quantidade | Preço unitário | Per Tubo |
|---|---|---|
| 50 - 50 | R$ 8,06 | R$ 403,00 |
| 100 - 450 | R$ 5,75 | R$ 287,50 |
| 500 - 950 | R$ 5,04 | R$ 252,00 |
| 1000 - 1950 | R$ 4,38 | R$ 219,00 |
| 2000+ | R$ 4,20 | R$ 210,00 |
Documentos Técnicos
Especificações
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
500 mA
Maximum Collector Emitter Voltage
300 V
Package Type
SOT-32
Mounting Type
Through Hole
Maximum Power Dissipation
2.8 W
Minimum DC Current Gain
30
Transistor Configuration
Single
Maximum Collector Base Voltage
300 V
Maximum Emitter Base Voltage
3 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.8 x 7.8 x 2.7mm
País de Origem
Malaysia
Detalhes do produto
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.


